1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b power transistor (60v, 3a) 2sc5826 ? features ? dimensions (unit : mm) 1) high speed switching. (tf : typ. : 30ns at i c = 3a) 2) low saturation voltage, typically (typ. : 200mv at i c = 2a, i b = 0.2ma) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sa2073 ? applications low frequency amplifier high speed switching ? structure npn silicon epitaxial planar transistor ? packaging specifications taping 2sc5826 type tv2 2500 package basic ordering unit (pieces) code ? absolute maximum ratings (ta=25 ? c) parameter v v v a a w c c symbol v cbo v ceo v ebo i c i cp p c t j t stg limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature dc pulsed 60 60 6 3 6 1.0 150 ? 55 to 150 ? ? pw = 100ms symbol : c5826 (1) emitter (2) collector (3) base atv taping specifications
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b data sheet 2sc5826 ? electrical characteristics (ta=25 ? c) collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current collector-emitter saturation voltage dc current gain transition frequency corrector output capacitance turn-on time storage time fall time parameter symbol min. typ. max. unit condition bv ceo bv cbo bv ebo i cbo i ebo v ce (sat) h fe f t cob t on t stg t f ? 1 non repetitive pulse ? 2 see switching charactaristics measurement circuits i c = 1ma i c = 100 a i e = 100 a v cb = 40v v eb = 4v i c = 2a i b = 0.2a v ce = 2v i c = 100ma v ce = 10v i e = ? 100ma f = 10mhz v cb = 10v i e = 0ma f = 1mhz ? 1 1 2 60 60 6 ? ? ? 120 ? ? ? ? ? ? ? ? ? ? 200 ? 200 20 50 150 30 ? ? ? 1.0 1.0 500 390 ? ? ? ? ? v v v a a mv ? mhz pf ns ns ns i c = 3a i b1 = 300ma i b2 = ? 300ma v cc 25v ? h fe rank q 120 ? 270 r 180 ? 390 ? electrical characteristic curves 01 .5 1 0.5 0.01 0.1 1 10 v ce = 2v base to emitter voltage : v be (v ) fig.1 grounded emitter propagation characteristic s collector current : i c (a) ta = 125 c ta = 25 c ta = ? 40 c 0.001 0.01 0.1 1 1 0 1 10 100 1000 collector current : i c (a) dc current gain : h fe fig.2 dc current gain vs. collector current ( ) ta = 25 c v ce = 5v v ce = 3v v ce = 2v 0.001 0.01 0.1 1 1 0 1 10 100 1000 collector current : i c (a) dc current gain : h fe fig.3 dc current gain vs. collector current ( ? ) ta = 125 c ta = 25 c ta = ? 40 c v ce = 2v 0.001 1 0 1 0.1 0.01 0.01 0.1 1 10 collector current : i c (a) collector saturation voltage : v ce (sat) (v) ta = 25 c i c / i b = 20 / 1 i c / i b = 10 / 1 fig.4 collector-emitter saturation voltage vs. collector current ( ) 0.001 1 0 1 0.1 0.01 0.01 0.1 1 10 collector current : i c (a) collector saturation voltage : v ce (sat) (v) i c / i b = 10 / 1 fig.5 collector-emitter saturation voltage vs. collector current ( ? ) ta = 125 c ta = 25 c ta = ? 40 c collector current : i c (a) base emitter saturation voltage : v be (sat) (v) 0.001 1 0 1 0.1 0.01 0.01 0.1 1 10 i c / i b = 10 / 1 ta = 125 c ta = 25 c ta = ? 40 c fig.6 base-emitter saturation voltage vs. collecter current
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev.b data sheet 2sc5826 emitter current : i e (a) fig.7 transition frequency transition frequency : ft (mhz) 0.001 1 0 1 0.1 0.01 1 10 100 1000 ta = 25 c v ce = 10v 0.1 1 10 10 0 1 10 100 base to collector voltage : v cb ( v) fig.8 collector output capacitance ta = 25 c f = 1mhz collector output capacitance : cob (pf) 0.01 1 0 1 0.1 10 100 1000 collector current : i c (a) switching time : (ns) fig.9 switching time ta = 25 c v cc = 25v i c / i b = 10 / 1 tstg tf ton ? switching characteristics measurement circuits collector current waveform base current waveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l = 8.3 v cc 25 v p w 50 s duty cycle 1% t on t stg t f
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